MOSFET? No, Inductive Field Effect Transistor! how?

Inductive Field Effect Transistor:   

                          The most common device in electronics is a transistor. Although there are more developments in transistor technology, CMOS technology is the widely used technology till now. CMOS technology is fully based on MOS capacitor characteristics. Nowadays also, most transistor technologies are mainly based on capacitance characteristics. What if this capacitance-based technology is replaced by an inductive effect in transistor technologies. Let’s see what will be the outcome.       

                    In I FET, the structure consists of a source(A1) and drain (A2) with an inductor in the middle.

 Inductor:

   In 1824, Oersted discovered that current passing through a coil created a magnetic field capable of shifting a compass needle. After seven years, Faraday and Henry discovered just the opposite. They noticed that a moving magnetic field would induce a current in an electrical conductor.

  The process of generating electrical current in a conductor by placing the conductor in a changing magnetic field is called electromagnetic induction. It is called induction because the current is said to be induced in the conductor by a magnetic field.

                                                       E=-N(DG/DT).

 E is the induced emf,

 N is the number of turns in the coil, and                

 DG/DT is the rate of change of magnetic flux (measured in unit Gauss).

  Here, the negative sign is a consequence of Lens law (inductor opposes the change, which induces emf).

 Inductance is the electrical property that opposes any change in the magnitude of current in a circuit. The letter L is the symbol used to represent inductance. Devices that are used to provide inductance in the circuit are called inductors. Inductors are also known as chokes, reactors and coils.

                                E=-L(DI/DT).

  So, if a current is produced in an inductor, then the current in the inductor has to increase, this would imply that a negative potential difference develops across the inductor. This would imply that no further current should pass through it, as the current cannot flow from a low potential to a high potential unless there is an EMF device, which can do some positive work on the charges between the points.

  The inductor can be called an emf device, but it does negative work on charges if the current through it is increasing. The working of the inductor can be understood better with the analogy that the inductor plays the same role that inertia plays in mechanics.

  Inductors try and stop the current change and reduce the rate of change of current. Suppose the inductor did win and there was no current, then the current is not changing. The inductor opposes the changing current only when the current is changing.

 Characteristics of the central portion Inductor:

    Inductor acts as a short circuit in steady-state DC supply. Thus, on applying  M-DC, the core gets saturated. The current flowing through the saturated core will be like a stationary flow. Just like in ballistic current transport in the channel, there are no collisions.

 Characteristics of the source and drain:

    By taking the hydrodynamic transport model from the reference, Absolute Negative Resistance in Ballistic Variable threshold field-effect transistor, then according to Bernoulli’s law, we are considering a situation of water flowing through a pipe with varying cross-sections. If there is no flow, the pressure is the same on both sides. 

    In the presence of stationary water flow, pressure will be lower in the narrow part of the pipe, where the velocity is larger. This means that when water flows from the narrow part of the pipe to the wider part of the pipe, it is flowing opposite to the pressure gradient. It can be said that the interface has absolute negative resistance. 

    Similar to that, the A1 has more concentration of electrons, and it has physical dimension less than A2. A2 has less concentration of electrons. Energy and potential are directly related to mass(which implies concentration). Pressure will be more in A1 than A2. Besides, pressure in hydrodynamics is directly related to potential in an electrical term.

 An Active Resistor:

Under the conditions,

1. Diffusion current from A1 to A2  in addition to the high inbuilt potential-pressure gradient in A1 than A2.

    Considering the above, if applied potential V-DC tends to produce the drift current in the opposite direction, it will result in absolute negative resistance in the core based on net relative differences among diffusion, pressure-potential gradient and applied drift.

 Conclusion:    

  Finally, different magnitudes of resistance can be obtained from this model and surprisingly negative resistance values too.

       

 

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